| PART |
Description |
Maker |
| NJD2873T4G NJD2873T4 |
BIP DPAK NPN 2A 50V TR
NPN Silicon DPAK For Surface Mount Applications
|
ON Semiconductor
|
| NJVNJD2873T4G |
NPN Silicon DPAK For Surface Mount Applications
|
ON Semiconductor
|
| MJD47 MJD47T4 MJD50 ON2006 MJD50-1 MJD50T4 MJD47-1 |
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 / 400 VOLTS 15 WATTS
NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS 1 A, 400 V, NPN, Si, POWER TRANSISTOR
From old datasheet system
NPN SILICON POWER TRANSISTORS 1 AMPERE 250 400 VOLTS 15 WATTS
DPAK For Surface Mount Applications
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semiconductor
|
| MBRD650CT |
SWITCHMODEPower Rectifirers DPAK Surface Mount Package 3 A, 50 V, SILICON, RECTIFIER DIODE
|
Motorola Mobility Holdings, Inc.
|
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| MTD10N10EL-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| KSH112GTMSB82051 |
NPN Silicon Darlington Transistor; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 2 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor, Corp.
|
| BD880CS BD8150CS BD8200CS BD8100CS BD840CS BD845CS |
DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
4 A, 45 V, SILICON, RECTIFIER DIODE, TO-252
4 A, 100 V, SILICON, RECTIFIER DIODE, TO-252
|
Pan Jit International Inc.
|
| PZTA64T1 PZTA64T1_D ON2784 |
From old datasheet system
SOT23 PACKAGE NPN SILICON
PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT
|
ON Semi
MOTOROLA[Motorola, Inc]
|
| MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
